Application of the EKV model to the DTMOS SOI transistor
نویسندگان
چکیده
−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-on-Insulator technology, MOS devices, Insulated gate FETs
منابع مشابه
0.7 V Manchester carry look-ahead circuit using PD SOI CMOS asymmetrical dynamic threshold pass transistor techniques suitable for low-voltage CMOS VLSI systems
The authors report a 0.7V Manchester carry look-ahead circuit using partially depleted (PD) SOI CMOS dynamic threshold (DTMOS) techniques for low-voltage CMOS VLSI systems. Using an asymmetrical dynamic threshold pass-transistor technique with the PD-SOI DTMOS dynamic logic circuit, this 0.7V PD-SOI DTMOS Manchester carry look-ahead circuit has an improvement of 30% in propagation delay time co...
متن کاملComparative Assessment of Adaptive Body-Bias SOI Pass-Transistor Logic
We present a silicon-on-insulator (SOI) pass-transistor logic (PTL) gate with an active body bias control circuit and compare the proposed PTL gate with other types of PTL gates with different body bias circuits in two different 0.13μm SOI CMOS technologies. The experimental results show that the proposed SOI PTL gate using the body bias controlled technique is superior in terms of performance ...
متن کاملEvaluation of Dynamic-Threshold Logic for Low-Power VLSI Design in 0.13um PD-SOI
Dynamic Threshold (DTMOS) circuits have been proposed as a circuit style for low-power VLSI systems that takes advantage of the independent body control in partially-depleted SOI. As SOI technologies have scaled, the increasing body capacitance and body resistance have limited the effectiveness of DTMOS circuits that drive the body at the same speed as the gate. An analysis of DTMOS in 0.13μm P...
متن کاملInvestigation and simulation of the effect of Substrate Doping on the Switching Delay of 22nm Double-Insulating UTBB SOI MOSFET
In this paper, for the first time, the effect of the substrate doping of 22nm double-insulating UTBB silicon-on-insulator device on the switching performance and turn-on delay of the transistor is investigated. In UTBB devices, the substrate voltage is varied from positive to zero then negative voltages to trade-off transistor speed against the leakage current. Various circuit design procedures...
متن کاملImprovement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering
In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...
متن کامل